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Introduction to nanoelectronic single-electron circuit design /

"The author employs an unconventional approach in explaining the operation and design of single-electron circuits. All models and equivalent circuits are derived from first principles of circuit theory. This is a must if we want to understand the characteristics of the nanoelectronic devices an...

وصف كامل

التفاصيل البيبلوغرافية
المؤلف الرئيسي: Hoekstra, Jaap
التنسيق: Printed Book
اللغة:English
منشور في: Singapore : Pan Stanford, c2010.
الموضوعات:
LEADER 02312cam a22002415a 4500
008 100407s2010 si a b 001 0 eng
010 |a  2010287231 
020 |a 9789814241939 (hbk.) 
020 |a 9814241938 (hbk.) 
100 1 |a Hoekstra, Jaap. 
245 1 0 |a Introduction to nanoelectronic single-electron circuit design /  |c Jaap Hoekstra. 
260 |a Singapore :  |b Pan Stanford,  |c c2010. 
300 |a xv, 301 p. :  |b ill. ;  |c 24 cm. 
504 |a Includes bibliographical references (p. 289-292) and index. 
505 2 |a Introduction -- Tunneling experiments in nanoelectronics -- Current in electrodynamics and circuit theory -- Free electrons in quantum mechanics -- Current and tunnel current in quantum physics -- Energy in circuit theory -- Energy in the switched two-capacitor circuit -- Impulse circuit model for single-electron tunneling--zero tunneling time -- Impulse circuit models for single-electron tunneling--nonzero tunneling times -- Generalizing the theory to multi-junction circuits -- Single electron tunneling circuit examples -- Circuit design methodologies -- More potential applications and challenges. 
520 1 |a "The author employs an unconventional approach in explaining the operation and design of single-electron circuits. All models and equivalent circuits are derived from first principles of circuit theory. This is a must if we want to understand the characteristics of the nanoelectronic devices and subcircuits. Besides this, a circuit theoretical approach is necessary for considering possible integration in current and future IC technology. Based on energy conservation, in circuit theory connected to Tellegen's theorem, the circuit model for single-electron tunneling is an impulsive current source. Modeling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a tunnel junction, no of an island."--P.[ 4] of cover. 
650 0 |a Nanoelectronics. 
650 0 |a Integrated circuits  |x Design and construction. 
942 |c BK 
906 |a 0  |b ibc  |c origres  |d 2  |e ncip  |f 20  |g y-gencatlg 
955 |b xh15 2010-04-07 z-processor to xh00  |a xh00 2010-04-07 to USPL/STM 
999 |c 96295  |d 96295 
952 |0 0  |1 0  |4 0  |6 621_381000000000000_HOE_I  |7 0  |9 96088  |a UL  |b UL  |c ST1  |d 2011-11-26  |g 0.00  |l 0  |o 621.381 HOE/I  |p 86438  |r 2012-10-28  |v 6021.49  |y BK