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Introduction to nanoelectronic single-electron circuit design /
"The author employs an unconventional approach in explaining the operation and design of single-electron circuits. All models and equivalent circuits are derived from first principles of circuit theory. This is a must if we want to understand the characteristics of the nanoelectronic devices an...
| 第一著者: | |
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| フォーマット: | Printed Book |
| 言語: | English |
| 出版事項: |
Singapore :
Pan Stanford,
c2010.
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| 主題: |
| 要約: | "The author employs an unconventional approach in explaining the operation and design of single-electron circuits. All models and equivalent circuits are derived from first principles of circuit theory. This is a must if we want to understand the characteristics of the nanoelectronic devices and subcircuits. Besides this, a circuit theoretical approach is necessary for considering possible integration in current and future IC technology. Based on energy conservation, in circuit theory connected to Tellegen's theorem, the circuit model for single-electron tunneling is an impulsive current source. Modeling distinguishes between bounded and unbounded currents. The Coulomb blockade is explained as a property of a tunnel junction, no of an island."--P.[ 4] of cover. |
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| 物理的記述: | xv, 301 p. : ill. ; 24 cm. |
| 書誌: | Includes bibliographical references (p. 289-292) and index. |
| ISBN: | 9789814241939 (hbk.) 9814241938 (hbk.) |