Okuyama, M., & Ishibashi, Y. (2000). Ferroelectric thin films: Basic properties and device physics for memory applications. Springer.
Chicago Edition CitationOkuyama, M., and Y. Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Berlin: Springer, 2000.
MLA Edition CitationOkuyama, M., and Y. Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Springer, 2000.
Warning: These citations may not always be 100% accurate.