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00737nam a2200253 a 4500 |
| 001 |
adlib96000001 |
| 003 |
ViArRB |
| 005 |
20151026132309.0 |
| 008 |
960221s1955 dcuabcdjdbkoqu001 0deng d |
| 020 |
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|a 9783540241638
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| 022 |
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| 040 |
|
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|a Adlib
|
| 082 |
|
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|a 539.216
|
| 245 |
|
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|a Ferroelectric thin films:basic properties and device physics for memory applications
|
| 250 |
|
|
|
| 260 |
|
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|a Berlin
|b Springer
|c 2005
|
| 300 |
|
|
|a xiii,244p.
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| 500 |
|
|
|a
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| 100 |
|
|
|a Okuyama, Masanori
|e ed.by
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| 700 |
|
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|a Ishibashi, Yoshihiro
|
| 942 |
|
|
|c BK
|6 _
|
| 653 |
|
|
|a Thin films
|a Ferroelectricity
|
| 999 |
|
|
|c 45667
|d 45667
|
| 952 |
|
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|0 0
|1 0
|4 0
|6 539216_OKU
|7 0
|9 58117
|a UL
|b UL
|d 2010-06-16
|o 539.216 OKU
|p 00060502
|r 2010-06-16
|w 2010-06-16
|y BK
|