Okuyama, M., & Ishibashi, Y. (2005). Ferroelectric thin films: Basic properties and device physics for memory applications. Springer.
Chicago Edition CitationOkuyama, Masanori, and Yoshihiro Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Berlin: Springer, 2005.
MLA引文Okuyama, Masanori, and Yoshihiro Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Springer, 2005.
警告:這些引文格式不一定是100%准確.