Okuyama, M., & Ishibashi, Y. (2005). Ferroelectric thin films: Basic properties and device physics for memory applications. Springer.
Chicago-стиль цитированияOkuyama, Masanori, and Yoshihiro Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Berlin: Springer, 2005.
MLA-цитированиеOkuyama, Masanori, and Yoshihiro Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Springer, 2005.
Предупреждение: эти цитированмия не могут быть всегда правильны на 100%.