Okuyama, M., & Ishibashi, Y. (2005). Ferroelectric thin films: Basic properties and device physics for memory applications. Springer.
Stile di citazione ChicagoOkuyama, Masanori, e Yoshihiro Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Berlin: Springer, 2005.
Citazione MLAOkuyama, Masanori, e Yoshihiro Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Springer, 2005.
Attenzione: Queste citazioni potrebbero non essere precise al 100%.