Okuyama, M., & Ishibashi, Y. (2005). Ferroelectric thin films: Basic properties and device physics for memory applications. Springer.
Citación estilo ChicagoOkuyama, Masanori, and Yoshihiro Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Berlin: Springer, 2005.
Cita MLAOkuyama, Masanori, and Yoshihiro Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Springer, 2005.
Warning: These citations may not always be 100% accurate.