Okuyama, M., & Ishibashi, Y. (2005). Ferroelectric thin films: Basic properties and device physics for memory applications. Springer.
Chicago Edition CitationOkuyama, Masanori, i Yoshihiro Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Berlin: Springer, 2005.
Cita MLAOkuyama, Masanori, i Yoshihiro Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Springer, 2005.
Atenció: Aquestes cites poden no estar 100% correctes.