Okuyama, M., & Ishibashi, Y. (2005). Ferroelectric thin films: Basic properties and device physics for memory applications. Springer.
استشهاد بنمط شيكاغوOkuyama, Masanori, و Yoshihiro Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Berlin: Springer, 2005.
MLA استشهادOkuyama, Masanori, و Yoshihiro Ishibashi. Ferroelectric Thin Films: Basic Properties and Device Physics for Memory Applications. Springer, 2005.
تحذير: قد لا تكون هذه الاستشهادات دائما دقيقة بنسبة 100%.