Cohesive properties of semiconductors under laser irradiation /

Bibliographic Details
Corporate Authors: North Atlantic Treaty Organization. Scientific Affairs Division, NATO Advanced Study Institute on Cohesive Properties of Semiconductors under Laser Irradiation Cargèse, France
Other Authors: Laude, Lucien D., ed
Format: Printed Book
Language:English
Published: The Hague ; M. Nijhoff ; 1983.
Series:NATO ASI series. Seires E: applied sciences; 69.
Subjects:
Semiconductors--Effect of radiation on--Congresses. > Laser beams--Congresses.
LEADER 01243cam a2200229 a 4500
005 20200810153313.0
008 830513s1983 ne a b 101 0 eng
082 0 0 |a 537.6/22  |b LAU 
245 1 0 |a Cohesive properties of semiconductors under laser irradiation /  |c edited by Lucien D. Laude. 
300 |a xix, 614 p. :  |b ill. ;  |c 25 cm. 
490 |a NATO ASI series. Seires E: applied sciences;  |v 69. 
653 |a Semiconductors--Effect of radiation on--Congresses.  |a Laser beams--Congresses. 
700 1 |a Laude, Lucien D., ed.  |9 5721 
710 2 |a North Atlantic Treaty Organization.  |b Scientific Affairs Division.  |9 1812 
942 |c BK  |6 _ 
260 |a The Hague ;  |b M. Nijhoff ;  |c 1983. 
500 |a Proceedings of the NATO Advanced Study Institute on Cohesive Properties of Semiconductors under Laser Irradiation, Cargèse, Corsica, France, July 19-30, 1982. 
500 |a "Published in cooperation with NATO Scientific Affairs Division." 
020 |a 9024728576 
111 2 |a NATO Advanced Study Institute on Cohesive Properties of Semiconductors under Laser Irradiation  |d (1982 :  |c Cargèse, France)  |9 5720 
999 |c 213427  |d 213427 
952 |0 0  |1 0  |2 ddc  |4 0  |6 537622_LAU  |7 0  |9 272046  |a PHY  |b PHY  |d 2010-03-06  |o 537.6/22 LAU  |p PHY006796  |r 2010-03-06  |w 2010-03-06  |y BK 

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