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| LEADER |
00688pam a2200169 a 4500 |
| 005 |
20200810153246.0 |
| 008 |
920214s1992 nyua b 001 0 eng |
| 082 |
0 |
0 |
|a 537.6/226
|b ADA
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| 100 |
1 |
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|a Adachi, Sadao,
|9 5631
|
| 245 |
1 |
0 |
|a Physical properties of III-V semiconductor compounds :
|b InP, InAs, GaAs, GaP, InGaAs, and InGaAsP /
|c Sadao Adachi.
|
| 300 |
|
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|a xviii, 318 p. :
|b ill. ;
|c 25 cm.
|
| 653 |
|
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|a Gallium arsenide semiconductors
|a Indium alloys
|a Indium phosphide
|
| 942 |
|
|
|c BK
|6 _
|
| 260 |
|
|
|a New York :
|b Wiley,
|c c1992.
|
| 020 |
|
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|a 0471573299
|
| 999 |
|
|
|c 213366
|d 213366
|
| 952 |
|
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|0 0
|1 0
|2 ddc
|4 0
|6 5376226_ADA
|7 0
|9 271970
|a PHY
|b PHY
|d 2010-03-05
|o 537.6/226 ADA
|p phy011134
|r 2018-05-17
|w 2018-05-17
|y BK
|