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Electrical conduction and dielectrical behavior of thin films of vaccum evaporated amorphus silicon, Hydrogenate amorphus silicon and chemically deposite cadmium sheets
Главный автор: | |
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Формат: | Ph.D Thesis |
Язык: | English |
Опубликовано: |
Kochi
Dept. of Physics - CUSAT
1989
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Предметы: |
UL
Шифр: |
539.216:537.311:546.28 RAJ |
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Копировать | Недоступно состояние Live" What does mean the status Live (working) |